| Naslov: | Effect of the nitrogen environment on indium gallium zinc oxide thin film transistors with low temperature ultraviolet annealing |
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| Avtorji: | ID An, Kunsik (Avtor)
ID Moon, Yoon Jae (Avtor)
ID Kim, Jun Young (Avtor)
ID Ndikumana, Joel (Avtor)
ID Kang, Kyung-Tae (Avtor) |
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| Datoteke: |  URL - Izvorni URL, za dostop obiščite https://ojs.midem-drustvo.si/index.php/InfMIDEM/article/view/2206
URL - Izvorni URL, za dostop obiščite https://ojs.midem-drustvo.si/index.php/InfMIDEM/article/view/2206
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| Jezik: | Angleški jezik |
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| Tipologija: | 1.01 - Izvirni znanstveni članek |
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| Organizacija: |  MIDEM - Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale
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| Povzetek: | This study explores the influence of nitrogen gas flow rate on the electrical characteristics of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) annealed under heat-assisted UV illumination. The aim is to understand how nitrogen flow rates impact the performance of solution-processed IGZO TFTs annealed at low temperatures, which is crucial for developing highperformance devices for next-generation electronics and temperature-sensitive applications. The IGZO TFTs were fabricated on glass substrates using a bottom-gate top-contact configuration, with the IGZO thin film deposited by inkjet printing and annealed in a chamber with varying nitrogen gas flow rates (0.5, 1, 2, and 5 L/min) at 250°C for 2 hours under UV illumination. The electrical characteristics were extracted from transfer characteristics measurements. The results show that a nitrogen flow rate of 1 L/min enhances the electrical properties of IGZO TFTs, likely due to a suitable concentration of oxygen vacancies. Excessive N2 flow rates (>1 L/min) negatively impact on the TFT characteristics, while lower flow rates (<1 L/min) result in more negative threshold voltages and lower on/off current ratios. The study concludes that optimizing the nitrogen gas flow rate is critical for achieving desired TFT properties, offering a valuable tool for fine-tuning IGZO TFTs to meet specific application requirements. |
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| Ključne besede: | MEC, IGZO TFTs, low temperature, nitrogen annealing effect, oxide semiconductor, thin film transistor |
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| Datum objave: | 01.01.2025 |
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| Leto izida: | 2025 |
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| Št. strani: | str. 193-198 |
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| Številčenje: | Vol. 55, no. 3 |
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| PID: | 20.500.12556/DiRROS-30239  |
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| UDK: | 621.38 |
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| ISSN pri članku: | 0352-9045 |
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| DOI: | 10.33180/InfMIDEM2025.306 |
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| COBISS.SI-ID: | 281497859 |
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| Opomba: | Besedilo v angl.; |
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| Datum objave v DiRROS: | 18.06.2026 |
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| Število ogledov: | 34 |
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| Število prenosov: | 23 |
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| Metapodatki: |    |
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