| Naslov: | Scandium and aluminum substitution and energy transfer processes in the undoped and Ce-doped ▫$Y_{3}Sc_{?}Al_{5−?}O_{12}$▫ scintillation crystals |
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| Avtorji: | ID Laguta, Valentin V. (Avtor)
ID Pejchal, J. (Avtor)
ID Rešetič, Andraž, Institut "Jožef Stefan" (Avtor), et al. |
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| Datoteke: |  URL - Izvorni URL, za dostop obiščite https://journals.aps.org/prmaterials/abstract/10.1103/png3-xnt7
 PDF - Predstavitvena datoteka, prenos (3,46 MB)
MD5: E60C3DFAB01239E895C7BF01254BAC0B
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| Jezik: | Angleški jezik |
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| Tipologija: | 1.01 - Izvirni znanstveni članek |
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| Organizacija: |  IJS - Institut Jožef Stefan
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| Povzetek: | The structural and scintillation properties of pure and Ce-doped Y3Sc�Al5−�O12 (�=0, 0.05, 1.16, and 2) crystals were systematically investigated. High-resolution 45 Sc and 27 Al magic angle spinning nuclear magnetic resonance spectroscopy revealed that Sc3+ ions predominantly occupy octahedral sites, effectively replacing Al3+ ions, while antisite Sc at Y dodecahedral positions remains below 0.2 at.%. Sc incorporation into Y3Al5O12 induces strong exciton emission at 320–324 nm, nearly 10 times higher than that of reference Bi4Ge3O12 (BGO) crystal, even at low Sc concentrations (5 at.%). Ce3+ doping introduces characteristic 5�1→4� emission at 518 nm, accelerates scintillation decay, and in combination with Mg2+ codoping, promotes the formation of Ce4+ ions that enable a fast radiative de-excitation pathway. Y3Sc2Al3O12: Ce exhibits a maximum scintillation light yield of 80–84% relative to BGO with a mean decay time of 85–110 ns. Thermostimulated liminescence and electron paramagnetic resonance studies indicate that holes are mainly trapped at oxygen ions near Sc ions (O− centers), while electrons are primarily localized at Sc antisite ions near oxygen vacancies (Sc2+–VO centers), affecting scintillation kinetics. Density functional theory calculations confirm that Sc3+ at the dodecahedral site forms a deep electron trap. These results highlight the key role of Sc and Ce in tuning emission, decay dynamics, and defect-mediated processes in Sc-admixed multicomponent garnet scintillators. |
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| Ključne besede: | garnet scintillators, rare-earth doping, defect physics and charge trapping |
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| Status publikacije: | Objavljeno |
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| Verzija publikacije: | Objavljena publikacija |
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| Poslano v recenzijo: | 18.12.2025 |
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| Datum sprejetja članka: | 24.03.2026 |
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| Datum objave: | 17.04.2026 |
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| Založnik: | American Physical Society |
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| Leto izida: | 2026 |
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| Št. strani: | str. 045201-1-045201-13 |
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| Številčenje: | Vol. 10, [article no.] 045201 |
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| Izvor: | ZDA |
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| PID: | 20.500.12556/DiRROS-29343  |
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| UDK: | 538.9 |
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| ISSN pri članku: | 2475-9953 |
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| DOI: | 10.1103/png3-xnt7 |
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| COBISS.SI-ID: | 276255747 |
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| Opomba: | Nasl. z nasl. zaslona;
Soavtor iz Slovenije: Andraž Rešetič;
Opis vira z dne 23. 4. 2026;
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| Datum objave v DiRROS: | 08.05.2026 |
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| Število ogledov: | 33 |
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| Število prenosov: | 16 |
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| Metapodatki: |    |
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