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Title: Effect of the nitrogen environment on indium gallium zinc oxide thin film transistors with low temperature ultraviolet annealing Authors: ID An, Kunsik (Author) ID Moon, Yoon Jae (Author) ID Kim, Jun Young (Author) ID Ndikumana, Joel (Author) ID Kang, Kyung-Tae (Author) Files: PDF - Presentation file, download (709,60 KB) MD5: 000ABC373D7F6A863EAEFF94C9EBED05   URL - Source URL, visit https://ojs.midem-drustvo.si/index.php/InfMIDEM/article/view/2206   URL - Source URL, visit https://ojs.midem-drustvo.si/index.php/InfMIDEM/article/view/2206   This document has even more files. Complete list of files is available below. Language: English Typology: 1.01 - Original Scientific Article Organization: MIDEM - Society for Microelectronics, Electronic Components and Materials Abstract: This study explores the influence of nitrogen gas flow rate on the electrical characteristics of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) annealed under heat-assisted UV illumination. The aim is to understand how nitrogen flow rates impact the performance of solution-processed IGZO TFTs annealed at low temperatures, which is crucial for developing highperformance devices for next-generation electronics and temperature-sensitive applications. The IGZO TFTs were fabricated on glass substrates using a bottom-gate top-contact configuration, with the IGZO thin film deposited by inkjet printing and annealed in a chamber with varying nitrogen gas flow rates (0.5, 1, 2, and 5 L/min) at 250°C for 2 hours under UV illumination. The electrical characteristics were extracted from transfer characteristics measurements. The results show that a nitrogen flow rate of 1 L/min enhances the electrical properties of IGZO TFTs, likely due to a suitable concentration of oxygen vacancies. Excessive N2 flow rates (>1 L/min) negatively impact on the TFT characteristics, while lower flow rates (<1 L/min) result in more negative threshold voltages and lower on/off current ratios. The study concludes that optimizing the nitrogen gas flow rate is critical for achieving desired TFT properties, offering a valuable tool for fine-tuning IGZO TFTs to meet specific application requirements. Keywords: MEC, IGZO TFTs, low temperature, nitrogen annealing effect, oxide semiconductor, thin film transistor Publication status: Published Publication version: Version of Record Publication date: 01.01.2025 Year of publishing: 2025 Number of pages: str. 193-198 Numbering: Vol. 55, no. 3 PID: 20.500.12556/DiRROS-30239  UDC: 621.38 ISSN on article: 0352-9045 DOI: 10.33180/InfMIDEM2025.306  COBISS.SI-ID: 281497859  Note: Besedilo v angl.; Publication date in DiRROS: 18.06.2026 Views: 240 Downloads: 314 Metadata:    Cite this work Plain text BibTeX EndNote XML EndNote/Refer RIS ABNT ACM Ref AMA APA Chicago 17th Author-Date Harvard IEEE ISO 690 MLA Vancouver : Copy citation

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Record is a part of a journal

Title:	Informacije MIDEM : časopis za mikroelektroniko, elektronske sestavne dele in materiale
Shortened title:	Inf. MIDEM
Publisher:	Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale
ISSN:	0352-9045
COBISS.SI-ID:	1220612

Document is financed by a project

Funder:	NRF - National Research Foundation of Korea
Funding programme:	Basic Science Research Program
Project number:	2021R1I1A3059714

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Funder:	Korea Ministry of SMEs and Startups
Project number:	RS-2025-02313349
Name:	Collabo R&D between Industry, University, and Research Institute

Licences

License:	CC BY 4.0, Creative Commons Attribution 4.0 International
Link:	http://creativecommons.org/licenses/by/4.0/
Description:	This is the standard Creative Commons license that gives others maximum freedom to do what they want with the work as long as they credit the author.

Secondary language

Language:	Slovenian
Title:	Vpliv dušikovega okolja na tankoplastne tranzistorje iz indij-galij-cinkovega oksida z nizkotemperaturnim ultravijoličnim žarjenjem
Abstract:	Študija raziskuje vpliv pretoka dušikovega plina na električne lastnosti tankoplastnih tranzistorjev (TFT) iz indij-galij-cinkoksida (IGZO), žarjenih pod toplotno podprto UV-osvetlitvijo. Cilj je razumeti, kako pretok dušika vpliva na delovanje IGZO TFT, obdelanih s tekočino in žarjenih pri nizkih temperaturah, kar je ključnega pomena za razvoj visoko zmogljivih naprav za elektroniko naslednje generacije in temperature občutljive aplikacije. IGZO TFT so bili izdelani na steklenih podlagah z uporabo konfiguracije spodnjih vrat in zgornjega kontakta, pri čemer je bil IGZO tanek film nanesen s tiskanjem z inkjet tiskalnikom in žarjen v komori z različnimi pretoki dušika (0,5, 1, 2 in 5 l/min) pri 250 °C 2 uri pod UV-osvetlitvijo. Električne lastnosti so bile izmerjene iz meritev prenosnih lastnosti. Rezultati kažejo, da pretok dušika 1 l/min izboljša električne lastnosti IGZO TFT, verjetno zaradi ustrezne koncentracije kisikovih praznin. Prekomerni pretoki N2 (>1 l/min) negativno vplivajo na lastnosti TFT, medtem ko nižji pretoki (<1 l/min) povzročajo bolj negativne pragovne napetosti in nižja razmerja med vklopnim in izklopnim tokom. Študija zaključuje, da je optimizacija pretoka dušika ključna za doseganje želenih lastnosti TFT, kar ponuja dragoceno orodje za natančno nastavitev IGZO TFT, da izpolnjujejo specifične zahteve aplikacij.
Keywords:	IGZO TFTs, nizka temperatura, učinek dušikovega žarjenja, oksidni polprevodnik, tankoplastni tranzistor

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1. Informacije MIDEM

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