| Title: | Effect of the nitrogen environment on indium gallium zinc oxide thin film transistors with low temperature ultraviolet annealing |
|---|
| Authors: | ID An, Kunsik (Author)
ID Moon, Yoon Jae (Author)
ID Kim, Jun Young (Author)
ID Ndikumana, Joel (Author)
ID Kang, Kyung-Tae (Author) |
|---|
| Files: |  URL - Source URL, visit https://ojs.midem-drustvo.si/index.php/InfMIDEM/article/view/2206
URL - Source URL, visit https://ojs.midem-drustvo.si/index.php/InfMIDEM/article/view/2206
|
|---|
| Language: | English |
|---|
| Typology: | 1.01 - Original Scientific Article |
|---|
| Organization: |  MIDEM - Society for Microelectronics, Electronic Components and Materials
|
|---|
| Abstract: | This study explores the influence of nitrogen gas flow rate on the electrical characteristics of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) annealed under heat-assisted UV illumination. The aim is to understand how nitrogen flow rates impact the performance of solution-processed IGZO TFTs annealed at low temperatures, which is crucial for developing highperformance devices for next-generation electronics and temperature-sensitive applications. The IGZO TFTs were fabricated on glass substrates using a bottom-gate top-contact configuration, with the IGZO thin film deposited by inkjet printing and annealed in a chamber with varying nitrogen gas flow rates (0.5, 1, 2, and 5 L/min) at 250°C for 2 hours under UV illumination. The electrical characteristics were extracted from transfer characteristics measurements. The results show that a nitrogen flow rate of 1 L/min enhances the electrical properties of IGZO TFTs, likely due to a suitable concentration of oxygen vacancies. Excessive N2 flow rates (>1 L/min) negatively impact on the TFT characteristics, while lower flow rates (<1 L/min) result in more negative threshold voltages and lower on/off current ratios. The study concludes that optimizing the nitrogen gas flow rate is critical for achieving desired TFT properties, offering a valuable tool for fine-tuning IGZO TFTs to meet specific application requirements. |
|---|
| Keywords: | MEC, IGZO TFTs, low temperature, nitrogen annealing effect, oxide semiconductor, thin film transistor |
|---|
| Publication date: | 01.01.2025 |
|---|
| Year of publishing: | 2025 |
|---|
| Number of pages: | str. 193-198 |
|---|
| Numbering: | Vol. 55, no. 3 |
|---|
| PID: | 20.500.12556/DiRROS-30239  |
|---|
| UDC: | 621.38 |
|---|
| ISSN on article: | 0352-9045 |
|---|
| DOI: | 10.33180/InfMIDEM2025.306 |
|---|
| COBISS.SI-ID: | 281497859 |
|---|
| Note: | Besedilo v angl.; |
|---|
| Publication date in DiRROS: | 18.06.2026 |
|---|
| Views: | 30 |
|---|
| Downloads: | 22 |
|---|
| Metadata: |    |
|---|
|
:
|
Copy citation |
|---|
| | | | Share: |  |
|---|
Hover the mouse pointer over a document title to show the abstract or click
on the title to get all document metadata. |
