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Title:Development of an improved zinc oxide thin film transistor for next-generation smartphone display technologies
Authors:ID Bose, Anindya (Author)
ID Biswas, Sayori (Author)
ID Sengupta, Sarthak (Author)
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URL URL - Source URL, visit https://ojs.midem-drustvo.si/index.php/InfMIDEM/article/view/2095
 
URL URL - Source URL, visit https://ojs.midem-drustvo.si/index.php/InfMIDEM/article/view/2095
 
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Language:English
Typology:1.01 - Original Scientific Article
Organization:Logo MIDEM - Society for Microelectronics, Electronic Components and Materials
Abstract:The study aims to create a portable and highly efficient Zinc Oxide (ZnO) Thin Film Transistor (TFT) on a single crystal Silicon substrate, followed by necessary electrical characterizations. The research explores relevant studies from around the world. The TFT has garnered attention worldwide due to its potential application in flat panel displays. The electrical and optoelectronic properties of ZnO-based TFT have also attracted significant interest. The figure of merit of a TFT is strongly influenced by crucial parameters such as on/off current ratio and field-dependent mobility, both of which are dependent on Transistor geometry, the crystallinity of the active layer, and the quality of the interface (such as semiconductor-insulator interface or metal-semiconductor interface). The growth and processing conditions of different layers impact these variables as well. The study presents the development of a low-powered and efficient bottom gate ZnO TFT on a p-type single-crystal Silicon substrate for next-generation laptop and mobile display segments. In this context, RF magnetron sputtering was used to create a bottom-gate ZnO-based Thin-film Transistor (ZnO-TFT) at room temperature. The ZnO-TFT operates in depletion mode with a threshold voltage of -1.2 V and exhibits a drain current on/off current ratio of 2 x 108 . Maximum saturation mobility of 48 cm2 /V-sec was recorded at VGS=24.1 V and VDS=10 V. This research study can be an opportunity for future researchers working in flexible smart panel display driving circuits.
Keywords:zinc oxide, maskless lithography, RF magnetron sputtering, thin film transistor, future display driver element
Publication status:Published
Publication version:Version of Record
Publication date:01.01.2025
Year of publishing:2025
Number of pages:str. 103-114
Numbering:Vol. 55, no. 2
PID:20.500.12556/DiRROS-30235 New window
UDC:621.382
ISSN on article:0352-9045
DOI:10.33180/InfMIDEM2025.204 New window
COBISS.SI-ID:281477379 New window
Note:Besedilo v angl.;
Publication date in DiRROS:18.06.2026
Views:129
Downloads:141
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Record is a part of a journal

Title:Informacije MIDEM : časopis za mikroelektroniko, elektronske sestavne dele in materiale
Shortened title:Inf. MIDEM
Publisher:Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale
ISSN:0352-9045
COBISS.SI-ID:1220612 New window

Licences

License:CC BY 4.0, Creative Commons Attribution 4.0 International
Link:http://creativecommons.org/licenses/by/4.0/
Description:This is the standard Creative Commons license that gives others maximum freedom to do what they want with the work as long as they credit the author.

Secondary language

Language:Slovenian
Title:Razvoj izboljšanega tankoplastnega tranzistorja iz cinkovega oksida za naslednje generacije tehnologij za predvajanje na pametnih telefonih
Abstract:Cilj študije je ustvariti prenosni in visoko učinkovit tankoplastni tranzistor iz cinkovega oksida (ZnO) na monokristalni silicijevi podlagi, čemur sledijo potrebne električne karakterizacije. V raziskavi so preučene ustrezne študije z vsega sveta. TFT je po vsem svetu pritegnil pozornost zaradi možnosti uporabe v ploskih zaslonih. Električne in optoelektronske lastnosti TFT na osnovi ZnO so prav tako pritegnile veliko zanimanja. Na kakovost TFT močno vplivajo ključni parametri, kot sta razmerje med vklopnim in izklopnim tokom ter od polja odvisna gibljivost, ki sta odvisna od geometrije tranzistorja, kristaliničnosti aktivne plasti in kakovosti vmesnika (kot je vmesnik polprevodnik-izolator ali vmesnik kovina-polprevodnik). Na te spremenljivke vplivajo tudi pogoji rasti in obdelave različnih plasti. Študija predstavlja razvoj nizkozmogljivega in učinkovitega TFT z vrati iz ZnO na p-tipu monokristalne silicijeve podlage za naslednjo generacijo prenosnih računalnikov in mobilnih zaslonov. Pri tem je bilo z magnetronskim brizganjem RF uporabljeno za izdelavo tankoplastnega tranzistorja na osnovi ZnO (ZnO-TFT) z vrati pri sobni temperaturi. ZnO TFT deluje v načinu ponora z napetostjo praga -1,2 V in izkazuje razmerje vklopnega/izklopnega toka 2 x 108 . Največja nasičena gibljivost 48 cm2 /Vs je bila zabeležena pri VGS = 24,1 V in VDS = 10 V. Ta raziskava je lahko priložnost za prihodnje raziskovalce, ki se ukvarjajo s pogonskimi vezji prilagodljivih pametnih panelnih zaslonov.
Keywords:cinkov oksid, litografija brez maske prihodnosti, RF magnetronsko brizganje, tankoplastni tranzistor, element gonilnika zaslona prihodnosti


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