Analysis and mitigation of negative differential resistance effects with hetero-gate dielectric layer in negative-capacitance field-effect transistors

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Title:	Analysis and mitigation of negative differential resistance effects with hetero-gate dielectric layer in negative-capacitance field-effect transistors
Authors:	ID Huo, Honglei (Author)
Files:	URL - Source URL, visit https://www.midem-drustvo.si/journal_papers/MIDEM_54(2024)1p6.pdf URL - Source URL, visit https://plus.cobiss.net/cobiss/si/sl/data/cobib/245622787 URL - Source URL, visit https://www.midem-drustvo.si/journal_papers/MIDEM_54(2024)1p6.pdf
Language:	English
Organization:	MIDEM - Society for Microelectronics, Electronic Components and Materials
Publication date:	01.01.2024
Year of publishing:	2024
Number of pages:	str. 65-73
Numbering:	Vol. 54, no. 1
PID:	20.500.12556/DiRROS-29866
UDC:	621.382.3
ISSN on article:	0352-9045
DOI:	10.33180/InfMIDEM2024.106
COBISS.SI-ID:	245622787
Note:	Besedilo v angl.;
Publication date in DiRROS:	18.06.2026
Views:	30
Downloads:	24
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Title:	Informacije MIDEM : časopis za mikroelektroniko, elektronske sestavne dele in materiale
Shortened title:	Inf. MIDEM
Publisher:	Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale
ISSN:	0352-9045
COBISS.SI-ID:	1220612

Language:	Slovenian
Title:	Analiza in ublažitev učinkov negativne diferencialne upornosti s hetero-vratno dielektrično plastjo v poljskih tranzistorjih z negativno kapacitivnostjo
Keywords:	negativna diferencialna upornost, poljski tranzistor z negativno kapacitivnostjo, visoka dielektrična konstanta, heterovratni dielektrik

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