| Title: | Charge Injection for Polarization screening at electrode interfaces and the antiferroelectric double hysteresis loop of la-doped ▫$Pb(Zr,Sn,Ti)O_3$▫ |
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| Authors: | ID Huang, Binxiang (Author)
ID Rojac, Tadej, Institut "Jožef Stefan" (Author)
ID Klein, Andreas (Author), et al. |
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| Files: |  URL - Source URL, visit https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500671
 PDF - Presentation file, download (1,49 MB)
MD5: 0D0FE793D318F327DDFC03834D83D40A
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| Language: | English |
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| Typology: | 1.01 - Original Scientific Article |
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| Organization: |  IJS - Jožef Stefan Institute
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| Abstract: | Polarization screening at electrode interfaces has been the subject of controversial studies. The nature and role of the screeningcharges, especially when comparing the behavior of ferroelectric and antiferroelectric materials, are still not entirely clear.In this study, we analyze the polarization screening at electrode interfaces of ferroelectric and antiferroelectric La-dopedPbZr 0.75 Sn � Ti 0.25−� O3 by X-ray photoelectron spectroscopy with in situ polarization reversal. A variation of the Schottky barrierheight at a few nanometer thick RuO2 and Sn-doped In2O3 electrode interfaces, which is caused by an imperfect screeningof the polarization, is only observed for samples exhibiting ferroelectricity but not for samples with antiferroelectric hysteresisloops. According to the line shape analysis of the photoelectron spectra, the different screening behavior of ferroelectric andantiferroelectric La-doped PbZr0.75 Sn � Ti 0.25−� O3 can be assigned to differences in charge injection. Antiferroelectric hysteresisloops are observed if the screening charges are completely injected from the electrode while only partial charge injection isobserved into ferroelectric samples. Charge injection could be fundamental to the reversibility of the field-induced transitionfrom the non-polar to the polar state of antiferroelectrics. |
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| Keywords: | condensed matter physics, polarization screening, ferroelectric behaviour, antiferroelectric behaviour, Schottky barrier modulation |
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| Publication status: | Published |
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| Publication version: | Version of Record |
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| Submitted for review: | 23.07.2025 |
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| Article acceptance date: | 07.12.2025 |
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| Publication date: | 07.01.2026 |
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| Publisher: | Wiley |
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| Year of publishing: | 2026 |
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| Number of pages: | str. 1-10 |
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| Numbering: | Vol. , iss. [article no.] e00671 |
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| Source: | Nemčija |
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| PID: | 20.500.12556/DiRROS-27495  |
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| UDC: | 538.9 |
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| ISSN on article: | 2196-7350 |
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| DOI: | 10.1002/admi.202500671 |
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| COBISS.SI-ID: | 264564995 |
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| Copyright: | © 2026 The Author(s). |
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| Note: | Nasl. z nasl. zaslona;
Soavtor iz Slovenije: Tadej Rojac;
Opis vira z dne 13. 1. 2026;
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| Publication date in DiRROS: | 10.02.2026 |
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| Views: | 339 |
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| Downloads: | 71 |
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