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Title:Study of the neutron radiation hardness of MAPD-3NK2 silicon photomultipliers
Authors:ID Ambrožič, Klemen, Institut "Jožef Stefan" (Author)
ID Jazbec, Anže, Institut "Jožef Stefan" (Author)
ID Holik, M. (Author)
ID Nuruyev, S. (Author)
ID Ahmadov, F. (Author)
ID Ahmadov, G. (Author)
ID Okhrimenko, O. (Author)
ID Mammadli, A. (Author)
ID Sadygov, A. (Author)
ID Sadygov, Z. (Author)
Files:URL URL - Source URL, visit https://www.nature.com/articles/s41598-025-24759-1
 
.pdf PDF - Presentation file, download (2,87 MB)
MD5: 077A1C0852F3BCC5A8AEAE168B6B3DE8
 
Language:English
Typology:1.01 - Original Scientific Article
Organization:Logo IJS - Jožef Stefan Institute
Abstract:The radiation hardness of MAPD-3NK2 photodiodes with deep-buried pixel structures was evaluated under neutron irradiation at fluences ranging from 3.6 × 109to 3.6 × 1012neq/cm². Irradiation induced dark current increase of up to 2060 times, a breakdown voltage shift of (0.37 ± 0.08) V, a photo signal amplitude reduction of (90.1 ± 0.4) %, and a tenfold degradation in amplitude resolution. Partial recovery was observed after 40 days of room-temperature annealing, with dark current decreasing by 35%.Similar performance changes were observed in photodiodes with artificially elevated dark current, indicating that excess current is the primary driver of degradation. This current likely impedes photoelectron detection by occupying pixels or failing to fully quench the avalanche process, thereby reducing photocurrent.
Keywords:neutron irradiation, radiation hardness, silicon photomultipliers, photodiodes, dark current degradation
Publication status:Published
Publication version:Version of Record
Submitted for review:21.05.2025
Article acceptance date:15.10.2025
Publication date:20.11.2025
Publisher:Nature Publishing Group
Year of publishing:2025
Number of pages:str. 1-12
Numbering:Vol. 15, article no. 40974
Source:Združeno kraljestvo
PID:20.500.12556/DiRROS-24398 New window
UDC:53
ISSN on article:2045-2322
DOI:10.1038/s41598-025-24759-1 New window
COBISS.SI-ID:258683651 New window
Copyright:© The Author(s) 2025
Note:Nasl. z nasl. zaslona; Soavtorja iz Slovenije: A. Jazbec, K. Ambrožič; Opis vira z dne 25. 11. 2025;
Publication date in DiRROS:26.11.2025
Views:142
Downloads:58
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Record is a part of a journal

Title:Scientific reports
Shortened title:Sci. rep.
Publisher:Nature Publishing Group
ISSN:2045-2322
COBISS.SI-ID:18727432 New window

Document is financed by a project

Funder:EC - European Commission
Project number:101129879
Name:Novel detector concept for medical gamma probe
Acronym:DETMED

Licences

License:CC BY-NC-ND 4.0, Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
Link:http://creativecommons.org/licenses/by-nc-nd/4.0/
Description:The most restrictive Creative Commons license. This only allows people to download and share the work for no commercial gain and for no other purposes.
Licensing start date:20.11.2025
Applies to:VoR

Secondary language

Language:Slovenian
Keywords:nevtronsko obsevanje, odpornost na sevanje, silicijevi fotopomnoževalniki, fotodiode, poslabšanje zaradi temnega toka


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