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2. PredgovorManca Filak, 2026, preface, editorial, afterword Keywords: etnografski film, vizualna etnografija, vizualna antropologija, filmski seminar, ethnographic film, visual ethnography, visual anthropology, film seminar
Published in DiRROS: 27.06.2026; Views: 151; Downloads: 60
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3. Slovenija kot privlačna destinacija za snemanje tujih filmov? Primer indijske filmske industrijeJani Kozina, Rok Ciglič, Primož Gašperič, Mimi Urbanc, 2025, original scientific article Abstract: Članek analizira Slovenijo kot snemalno destinacijo indijske filmske industrije, ki je največja na svetu in vse bolj posega po evropskih lokacijah. Na podlagi analize podatkovne zbirke IMDb, pregleda filmov, intervjujev, fokusne skupine in delavnice so obravnavane prostorske značilnosti slovenskih snemalnih lokacij, njihova vloga v filmih ter dejavniki in učinki snemanj. Rezultati kažejo, da Slovenija nastopa predvsem kot slikovita kulisa v krajših glasbeno-plesnih prizorih, a jo odlikujejo pokrajinska raznolikost, cenovna dostopnost in kakovostna tehnična podpora. Ob ustrezni institucionalni strategiji, finančnih spodbudah, promociji in mreženju bi se lahko uveljavila kot prepoznavna destinacija, kar bi prineslo pomembne gospodarske, turistične, kulturne in diplomatske koristi.
Keywords: kulturni sektor, kulturne dejavnosti, ustvarjalne dejavnosti, filmski turizem, ustvarjalnost, ustvarjalno gospodarstvo, inovacije, indijski film
Published in DiRROS: 24.06.2026; Views: 196; Downloads: 111
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4. Development of an improved zinc oxide thin film transistor for next-generation smartphone display technologiesAnindya Bose, Sayori Biswas, Sarthak Sengupta, 2025, original scientific article Abstract: The study aims to create a portable and highly efficient Zinc Oxide (ZnO) Thin Film Transistor (TFT) on a single crystal Silicon substrate, followed by necessary electrical characterizations. The research explores relevant studies from around the world. The TFT has garnered attention worldwide due to its potential application in flat panel displays. The electrical and optoelectronic properties of ZnO-based TFT have also attracted significant interest. The figure of merit of a TFT is strongly influenced by crucial parameters such as on/off current ratio and field-dependent mobility, both of which are dependent on Transistor geometry, the crystallinity of the active layer, and the quality of the interface (such as semiconductor-insulator interface or metal-semiconductor interface). The growth and processing conditions of different layers impact these variables as well. The study presents the development of a low-powered and efficient bottom gate ZnO TFT on a p-type single-crystal Silicon substrate for next-generation laptop and mobile display segments. In this context, RF magnetron sputtering was used to create a bottom-gate ZnO-based Thin-film Transistor (ZnO-TFT) at room temperature. The ZnO-TFT operates in depletion mode with a threshold voltage of -1.2 V and exhibits a drain current on/off current ratio of 2 x 108 . Maximum saturation mobility of 48 cm2 /V-sec was recorded at VGS=24.1 V and VDS=10 V. This research study can be an opportunity for future researchers working in flexible smart panel display driving circuits.
Keywords: zinc oxide, maskless lithography, RF magnetron sputtering, thin film transistor, future display driver element
Published in DiRROS: 18.06.2026; Views: 161; Downloads: 189
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5. Effect of the nitrogen environment on indium gallium zinc oxide thin film transistors with low temperature ultraviolet annealingKunsik An, Yoon Jae Moon, Jun Young Kim, Joel Ndikumana, Kyung-Tae Kang, 2025, original scientific article Abstract: This study explores the influence of nitrogen gas flow rate on the electrical characteristics of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) annealed under heat-assisted UV illumination. The aim is to understand how nitrogen flow rates impact the performance of solution-processed IGZO TFTs annealed at low temperatures, which is crucial for developing highperformance devices for next-generation electronics and temperature-sensitive applications. The IGZO TFTs were fabricated on glass substrates using a bottom-gate top-contact configuration, with the IGZO thin film deposited by inkjet printing and annealed in a chamber with varying nitrogen gas flow rates (0.5, 1, 2, and 5 L/min) at 250°C for 2 hours under UV illumination. The electrical characteristics were extracted from transfer characteristics measurements. The results show that a nitrogen flow rate of 1 L/min enhances the electrical properties of IGZO TFTs, likely due to a suitable concentration of oxygen vacancies. Excessive N2 flow rates (>1 L/min) negatively impact on the TFT characteristics, while lower flow rates (<1 L/min) result in more negative threshold voltages and lower on/off current ratios. The study concludes that optimizing the nitrogen gas flow rate is critical for achieving desired TFT properties, offering a valuable tool for fine-tuning IGZO TFTs to meet specific application requirements.
Keywords: MEC, IGZO TFTs, low temperature, nitrogen annealing effect, oxide semiconductor, thin film transistor
Published in DiRROS: 18.06.2026; Views: 137; Downloads: 167
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6. Roadmap for electrocaloric films characterizationVictor Regis de Moraes, Urban Tomc, Andrej Kitanovski, Hana Uršič Nemevšek, 2026, original scientific article Abstract: The development of electrocaloric (EC) elements for cooling technologies has progressed by integrating the EC layers onto various substrates. However, a precise understanding of heat losses on direct characterization methods is still lacking, particularly in the infrared (IR) camera method. In this work, we perform numerical simulations on EC film structures to benchmark the substrate influence on the cooling output of the structure for characterization purposes. Substrates with low thermal effusivity (≤3 kW ▫$s^{1/2} m^{−2} K^{−1}$▫) exhibit minimal influence on the output of films. Simulations were also performed to investigate the impact of EC film and black-paint coating thicknesses on the correction factor for IR characterization methods. A single-digit correction factor can be achieved if the EC film is thicker than the coating. Our results offer a roadmap for designing EC structures for cooling at the micro-to-nano scales.
Keywords: simulation in materials science, materials characterization techniques, films, IR thermography, thin-film coatings, electrocaloric elements
Published in DiRROS: 03.06.2026; Views: 170; Downloads: 254
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8. The effect of wax emulsion on the performance of chromium-free anti-fingerprint passivation filmZhenqian Zhang, Deyi Zhang, Yulong Li, Jinpeng Liang, Jian Li, Xiaohua Liu, Yi Wang, 2026, original scientific article Keywords: chromium-free fingerprint-resistant passivation film, hot-dip aluminum-zinc plating, Anionic waterborne polyurethane resin, wax emulsion
Published in DiRROS: 17.04.2026; Views: 277; Downloads: 206
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9. Green inhibition of microbiologically influenced corrosion on 316L stainless steel by Artemisia annua extractGloria Zlatić Jelić, Ivana Martinović, Zora Pilić, Janez Kovač, Marcela Romić, 2026, original scientific article Abstract: 316L stainless steel is widely used in marine and biomedical applications. However, its protective Cr-rich passive film can be destabilized by microbiologically influenced corrosion (MIC). Here, a multidisciplinary approach combining electrochemical impedance spectroscopy (EIS), potentiodynamic polarization (PP), optical profilometry, ATR-FTIR, X-ray photoelectron spectroscopy (XPS), and ICP-OES was used to investigate corrosion behavior and passive film chemistry of 316L stainless steel (SS) exposed to Pseudomonas aeruginosa in artificial seawater, and to evaluate the inhibitory effect of an aqueous Artemisia annua extract (AAE). Exposure to P. aeruginosa, resulted in a marked decrease in film resistance, increased corrosion current density, enhanced Fe dissolution, and pronounced surface pitting. Although biotic exposure increased the apparent oxide thickness, XPS analysis revealed the formation of a chemically heterogeneous and less protective surface layer. In contrast, the addition of AAE significantly mitigated these effects by stabilizing a Cr-enriched passive film, increasing charge-transfer resistance, reducing jcor, and suppressing localized attack. ATR-FTIR confirmed adsorption of phenolic acids from AAE, while XPS depth profiling revealed stabilization and thickening of the passive layer. The inhibition efficiency of AAE, evaluated by PP, EIS, and ICP-OES, ranged from 65% to 83%, demonstrating consistent protective behavior across all methods. These results indicate that A. annua extract acts as a plant-derived corrosion inhibitor that preserves the functional stability of the Cr-rich passive film under MIC conditions, offering a promising strategy for corrosion mitigation in marine environments.
Keywords: biofilm formation, electrochemical impendance spectroscopy, seawater corrosion, ATR-FTIR spectroscopy, X‑ray photoelectron spectroscopy, passive film stability
Published in DiRROS: 20.03.2026; Views: 383; Downloads: 290
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