20.500.12556/DiRROS-31329 Superconducting nanowire-driven charge configuration memristor Cryo-computing – both classical and quantum, is severely limited by the absence of a suitable cryo-memory. The challenges both in terms of energy efficiency and speed have been known for decades, but so far conventional technologies have not been able to deliver adequate performance. Here we present a non-volatile memory device which incorporates a superconducting nanowire and an all-electronic charge configuration memristor (CCM) based on switching between charge-ordered states in a layered dichalcogenide material. We numerically investigate the time-dynamics and current-voltage characteristics of such a device by modelling of the superconducting order parameter. The observed current-voltage response is faithfully reproduced by fabricated devices using a NbTiN nanowire and a 1T-TaS2 CCM element. The inherent ultrahigh energy efficiency and speed of the device, which is in principle compatible with single flux quantum logic, leads to a promising memory concept for use in cryo-computing and quantum computing peripheral devices. cryogenic memory superconducting nanowire charge configuration memristor kriogenski pomnilnik superprevodni nanowire memristor s pomnilno konfiguracijo true false true Springer Nature Združeno kraljestvo Angleški jezik Slovenski jezik © The Author(s) 2026 Neznano 2026-07-28 13:38:07 2026-07-28 13:38:08 2026-07-29 03:47:12 0000-00-00 00:00:00 2026 0 0 Nasl. z nasl. zaslona; Opis vira z dne 24. 7. 2026; str. 1-9 Vol. 9ǂ, article no. 225 2026 0000-00-00 Zaloznikova Objavljeno NiDoloceno 2025-05-10 2026-04-14 2026-07-06 004.3 2399-3650 10.1038/s42005-026-02647-y 285964291 https://www.nature.com/articles/s42005-026-02647-y 1 d1c3320e-8a78-11f1-99a3-001a4af901a5 https://dirros.openscience.si/Dokument.php?lang=slv&id=48449 RAZ_Mraz_Anze_2026.pdf RAZ_Mraz_Anze_2026.pdf 1 839659F85A30AC071EC6CBB82BEE525D fb48e69e72d53b650b46d4fd2c4dabeffa870b4a8b055afa758197f6c5d7398c 497cfb74-8a79-11f1-99a3-001a4af901a5 https://dirros.openscience.si/Dokument.php?lang=slv&id=48450 Institut Jožef Stefan 0 0 0