20.500.12556/DiRROS-29038 Impact of sintering temperature on structural, microstructural and electrical properties of screen-printed ▫$0.7Pb(Fe_{0.5}Nb_{0.5})O_3–0.3BiFeO_3$▫ thick films (1–x)Pb(Fe0.5Nb0.5)O3–xBiFeO3 (PFN–100xBFO) ceramics exhibit versatile functional properties, from ferroelectric, relaxor to antiferroelectric behaviour, but have not yet been prepared as ceramic thick films, which are the key to miniaturization of electronic components. In this work, screen-printed thick films of PFN–30BFO were prepared on gold-coated alumina substrates and sintered at 800 °C, 850 °C and 930 °C. The impact of the sintering temperature on their properties was studied. The films annealed at 930 °C exhibited excessive electrical conductivity. In contrast, well developed polarization versus electric field hysteresis loops were observed in the films treated at 800 °C and 850 °C. The films annealed at 800 °C had the smallest grain size and dielectric permittivity values but achieved the highest dielectric breakdown strength. The findings of this study highlight the potential of PFN–30BFO screen-printed films, sintered at 800 °C, for use in miniaturized high-voltage electronic devices. thick films electronic ceramics sintering temperature debele plasti elektronska keramika temperatura sintranja true false true Elsevier Nizozemska Angleški jezik Slovenski jezik Neznano 2026-04-17 15:26:48 2026-04-17 15:26:48 2026-04-18 03:52:07 0000-00-00 00:00:00 2026 0 0 Nasl. z nasl. zaslona; Soavtorji: Andreja Benčan, Silvo Drnovšek, Antonio Iacomini, Nejc Suban, Brigita Kmet, Uroš Prah, Tadej Rojac, Hana Uršič; Opis vira z dne 19. 3. 2026; str. 1-28 iss. 11, [article no.] 118317 Vol. 46 Sep. 2026 0000-00-00 PostprintKoncna Objavljeno NiDoloceno 2025-12-05 2026-03-16 2026-03-21 2028-03-21 620.1/.2 1873-619X 10.1016/j.jeurceramsoc.2026.118317 272220419 https://www.sciencedirect.com/science/article/pii/S0955221926001937 1 18dc90a0-3a61-11f1-a7d2-001a4af901a5 https://dirros.openscience.si/Dokument.php?lang=slv&id=43358 RAZ_Gorican_Ivana_2026.pdf RAZ_Gorican_Ivana_2026.pdf 1 CF196458C036DF9F8093ADF852AC045B 7b0da83616d532aa9905b0dbda2fcf8876267762d9f85440a1026f160b2adc67 7ad9694f-3a61-11f1-a7d2-001a4af901a5 https://dirros.openscience.si/Dokument.php?lang=slv&id=43359 Institut Jožef Stefan 0 0 0