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<metadata xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/"><dc:title>Upgrading of ▫$g-C_3N_4$▫ semiconductor by a Nitrogen-doped carbon material</dc:title><dc:creator>Ishak,	Nijad	(Avtor)
	</dc:creator><dc:creator>Jeyalakshmi,	Velu	(Avtor)
	</dc:creator><dc:creator>Šetka,	Milena	(Avtor)
	</dc:creator><dc:creator>Grandcolas,	Mathieu	(Avtor)
	</dc:creator><dc:creator>Devadas,	Balamurugan	(Avtor)
	</dc:creator><dc:creator>Šoóš,	Miroslav	(Avtor)
	</dc:creator><dc:date>2023</dc:date><dc:date>2025-07-22 11:40:43</dc:date><dc:type>Neznano</dc:type><dc:identifier>23081</dc:identifier><dc:identifier>UDK: 66</dc:identifier><dc:identifier>ISSN pri članku: 2213-3437</dc:identifier><dc:identifier>DOI: 10.1016/j.jece.2023.109381</dc:identifier><dc:identifier>COBISS_ID: 241696771</dc:identifier><dc:language>sl</dc:language><dc:rights>© 2023 Elsevier Ltd. All rights reserved.</dc:rights></metadata>
